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MGF1801BT - High-power GaAs FET

Description

The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators.

The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

Features

  • High linear power gain Glp=9.0dB @f=8GHz.
  • High P1dB P1dB=23dBm(TYP. ) @f=8GHz.
  • High reliability and stability.

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Datasheet preview – MGF1801BT

Datasheet Details

Part number MGF1801BT
Manufacturer Mitsubishi Electric
File Size 109.64 KB
Description High-power GaAs FET
Datasheet download datasheet MGF1801BT Datasheet
Additional preview pages of the MGF1801BT datasheet.

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Full PDF Text Transcription

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< High-power GaAs FET (small signal gain stage) > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in the super 24 tape. FEATURES  High linear power gain Glp=9.0dB @f=8GHz  High P1dB P1dB=23dBm(TYP.
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