MGF1801BT Datasheet | Mitsubishi Electric

DESCRIPTION The MGF1801BT, medium-power Ga As FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in the super 24 tape. FEATURES - High linear power gain Glp=9.0d B @f=8GHz - High P1d B P1d B=23d Bm(TYP.) @f=8GHz - High reliability and stability APPLICATION - S to X Band medium-power amplifiers and oscillators QUALITY - IG REMENDED BIAS CONDITION - VDS=6V,Id=100m A Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Gate to source breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature -8 -8 250 -0.6 1.5 1.2 175...