MGF1801BT Description
The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in the super 24 tape.
MGF1801BT Key Features
- High linear power gain Glp=9.0dB @f=8GHz
- High P1dB P1dB=23dBm(TYP.) @f=8GHz
- High reliability and stability
- S to X Band medium-power amplifiers and oscillators
- VDS=6V,Id=100mA