ML101J8 - a high power AlGaInP semiconductor laser

Product Overview

Mitsubishi

Datasheet Details

Part number	ML101J8
Manufacturer	Mitsubishi
File Size	47.87 KB
Description	a high power AlGaInP semiconductor laser
Datasheet	ML101J8 Datasheet
Additional preview pages of the ML101J8 datasheet.

Product details

Description

ML1XX8 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode with emission wavelength of 660-nm and standard CW light output of 40mW.ML1XX8 has a window-mirror-facet which improves the maximum output power.That leads to highly reliable and high-power operation.APPLICATION High-Density Optical Disc Drives DVD(Digital Versatile Disc)-RAM Drive ABSOLUTE MAXIMUM RATINGS Symbol Po VRL Tc Tstg Parameter Light output power Reverse voltage Case temperature No

Features

High Output Power: 40mW (CW) , 60mW (Pulse).
Visible Light: 660nm (typ. ) oscillation.

📁 Similar Datasheet

ML101J18 - LASER DIODES (Mitsubishi Electric)
ML101J21 - LASER DIODES (Mitsubishi Electric)
ML101J22 - a high power AlGaInP semiconductor laser (Mitsubishi Electric)
ML101J23 - LASER DIODES (Mitsubishi Electric)
ML101J24 - LASER DIODES (Mitsubishi Electric)
ML101J25 - LASER DIODES (Mitsubishi Electric)
ML101J26 - LASER DIODES (Mitsubishi Electric)
ML101J27 - LASER DIODES (Mitsubishi Electric)

Other Datasheets by Mitsubishi

ML101J10 - a high power AlGaInP semiconductor laser
ML101J14 - a high power AlGaInP semiconductor laser
ML1012R - a high power AlGaInP semiconductor laser
ML1013R - a high power AlGaInP semiconductor laser
ML1016R - a high power AlGaInP semiconductor laser
ML101U29 - LASER DIODES

Published: May 7, 2005 |