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RA30H1317M1 - Silicon RF Power Modules

General Description

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

The output power and drain current increase as the gate voltage increases.

Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.