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RA30H1317M1 Datasheet

Manufacturer: Mitsubishi Electric
RA30H1317M1 datasheet preview

RA30H1317M1 Details

Part number RA30H1317M1
Datasheet RA30H1317M1-Mitsubishi.pdf
File Size 260.83 KB
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
RA30H1317M1 page 2 RA30H1317M1 page 3

RA30H1317M1 Overview

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases.

RA30H1317M1 Key Features

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

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