• Part: RA30H1317M1
  • Description: Silicon RF Power Modules
  • Manufacturer: Mitsubishi Electric
  • Size: 260.83 KB
Download RA30H1317M1 Datasheet PDF
RA30H1317M1 page 2
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RA30H1317M1 page 3
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Datasheet Summary

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS pliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power bees available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate...