V29C51400T Datasheet | Mosel Vitelic Corp

Description PRELIMINARY Features s s s s s s 256K x 16-bit or 512K x 8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors - Sector-Erase Cycle Time: 10ms (Max) - Byte-Write Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation - Active Read Current: 19m A (Typ) - Active Program Current: 30m A (Typ) - Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.5V Self-timed write/erase operations with end-ofcycle detection - DATA Polling - Toggle Bit CMOS and TTL Interface Available in two versions - V29C51400T (Top Boot Block) - V29C51400B (Bottom Boot Block) Packages: - 48-pin TSOP s s s s s s s s The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The V29C51400T/V29C51400B offers a bination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The V29C51400T/V29C51400B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase. Boot block architecture enables the device to boot from a protected sector located either at the top (V29C51400T) or the bottom (V29C51400B). All inputs and outputs are CMOS and TTL patible. The V29C51400T/V29C51400B is ideal for applications that require updatable code and data storage. Device Usage Chart Operating Temperature Range 0°C to 70 °C Package Outline T - 70 - Access Time (ns) 90 - 120 - Temperature Mark Blank V29C51400T/V29C51400B Rev. 1.5 October 2000 MOSEL VITELIC V29C51400T/V29C51400B 51 400 -...