2N6075A Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6071/D Sensitive Gate Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. - Sensitive Gate Triggering Uniquely patible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions - Gate Triggering 4 Mode - 2N6071A,B, 2N6073A,B, 2N6075A,B - Blocking Voltages to 600 Volts - All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability - Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability 2N6071A,B- 2N6073A,B- 2N6075A,B- - Motorola preferred devices TRIACs 4 AMPERES RMS 200 thru 600 VOLTS MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating - Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110°C) 2N6071A,B 2N6073A,B 2N6075A,B IT(RMS) ITSM I2t PGM PG(AV) VGM Symbol VDRM 200 400 600 4 30 3.7 10 0.5 5 Amps Amps A2s Watts Watt Volts Value Unit Volts - On-State Current RMS (TC = 85°C) - Peak Surge Current (One Full cycle, 60 Hz, TJ = - 40 to +110°C) Circuit Fusing Considerations (t = 8.3 ms) - Peak Gate Power - Average Gate Power - Peak Gate Voltage - Indicates JEDEC Registered Data. 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are...