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BAS21LT1 - CASE 318 08/ STYLE 8 SOT 23 (TO 236AB)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS21LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 2 3 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.