• Part: BAS21LT1
  • Description: CASE 318 08/ STYLE 8 SOT 23 (TO 236AB)
  • Manufacturer: Motorola Semiconductor
  • Size: 66.71 KB
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Datasheet Summary

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 2 CASE 318 - 08, STYLE 8 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD...