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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
COLLECTOR 3
1 BASE
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,
CLT1
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol BC856 BC857 BC858 Unit
Collector – Emitter Voltage Collector – Base Voltage
VCEO
–65
–45
–30
VCBO
–80
–50
–30
V V
Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS
VEBO IC
–5.0 –100
–5.0 –100
–5.0 –100
V mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C Derate above 25°C
PD 300 mW
2.
BC857BLT1 Datasheet
