The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
BC857BV DUAL TRANSISTOR (PNP+PNP)
FEATURES z Epitaxial Die Construction z Complementary NPN Types Available (BC847BV)
z Ultra-Small Surface Mount Package
SOT-563
Marking: K5V
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-45
VEBO IC
Emitter-Base Voltage Collector Current -Continuous
-5 -0.1
PC RθJA TJ Tstg
Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
0.