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BCW60DLT1 - General Purpose Transistors

Key Features

  • limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150 °C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the po.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
BCW60ALT1 General Purpose Transistors
BCW60BLT1 General Purpose Transistors
BCW61BLT1 General Purpose Transistors
BCW61CLT1 General Purpose Transistors
BCW61DLT1 General Purpose Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW60ALT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE BCW60ALT1 BCW60BLT1 BCW60DLT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.