BCW60DLT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW60ALT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE BCW60ALT1 BCW60BLT1 BCW60DLT1 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc m Adc CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C DEVICE MARKING BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 2.0 m Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 1.0 m Adc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR- 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES - - IEBO - 20 20 20 n Adc µAdc n Adc 32 5.0 - - Vdc Vdc 0.062 in. 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist pany Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 BCW60ALT1 BCW60BLT1 BCW60DLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)...