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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF420/D
High Voltage Transistors
NPN Silicon
COLLECTOR 2
3 BASE
BF420 BF422
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol BF420 BF422 Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO VCBO VEBO
IC PD
300
250
300
250
5.0
500
625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.
BF422 Datasheet
