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BF422
High Voltage Transistors
NPN Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation (Note 1) @ TA = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO IC ICM PD
TJ, Tstg
Value 250 250 5.0 50 100
830 6.6 −55 to +150
Unit Vdc Vdc Vdc mAdc mA
mW mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol RqJA
Max 150
Unit °C/W
Thermal Resistance, Junction−to−Lead
RqJL
°C/W 68
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
BF422 Datasheet
