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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF721T1/D
PNP Silicon Transistor
COLLECTOR 2,4 BASE 1 EMITTER 3
BF721T1
Motorola Preferred Device
PNP SILICON TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value – 300 –300 – 300 – 5.0 –100 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts °C °C
1 2 3
4
CASE 318E-04, STYLE 1 SOT–223 (TO-261AA)
DEVICE MARKING
DF
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.
BF721T1 Datasheet
