BF721 Datasheet | Siemens Semiconductor Group

PNP Silicon High-Voltage Transistors BF 721 BF 723 q q q q q Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance plementary types: BF 720/722 (NPN) Type BF 721 BF 723 Marking BF 721 BF 723 Ordering Code (tape and reel) Q62702-F1239 Q62702-F1309 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS ≤ 110 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BF 721 VCE0 VCER VCB0 VEB0 IC ICM Ptot Tj Tstg - 300 300 5 Values BF 723 250 - 250 5 50 100 1.5 150 Unit V m A W ˚C - 65 … + 150 87 27 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BF 721 BF 723 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 BF 723 Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ BF 721 Collector-base breakdown voltage IC = 10 µA, IB = 0 BF 721 BF 723 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 Collector-emitter cutoff current VCE = 200 V, RBE = 2.7 kΩ VCE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 25 m A, VCE = 20 V Collector-emitter saturation voltage IC = 30 m A, IB = 5 m A AC characteristics Transition frequency IC = 10 m A, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 30 V, IC = 0, f = 1 MHz f T Cobo - - 100 0.8 - - MHz p F V(BR)CE0 V(BR)CER V(BR)CB0 300 250 V(BR)EB0 ICB0 ICER - - IEB0 h FE VCEsat - 50 - -...