BF959 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF959/D VHF Transistor NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 20 30 3.0 100 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C Watt m W/°C °C 1 2 3 CASE 29- 04, STYLE 21 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 m Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 20 30 3.0 - - - - - - - - 100 Vdc Vdc Vdc n Adc ON CHARACTERISTICS DC Current Gain (IC = 5.0 m Adc, VCE = 10 Vdc) (IC = 20 m Adc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 30 m Adc, IB = 2.0 m Adc) Base - Emitter Saturation Voltage (IC = 30 m Adc, IB = 2.0 m Adc) h FE 35 40 VCE(sat) VBE(sat) - - - - - - - - 1.0 1.0 Vdc Vdc - SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 20 m Adc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 m Adc, VCE = 10 Vdc, f = 100 MHz) mon Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 m A, VCE = 10 V, RS = 50 Ω, f = 200 MHz) f T 700 600 Cre...