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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by J112/D
JFET Chopper Transistor
N–Channel — Depletion
1 DRAIN 3 GATE
J112
2 SOURCE
MAXIMUM RATINGS
Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA)
1 2 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = –1.0 µAdc) Gate Reverse Current (VGS = –15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 µAdc) Drain–Cutoff Current (VDS = 5.
J112 Datasheet
