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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN0300L/D
TMOS FET Transistor
N–Channel — Enhancement
2 GATE 3 DRAIN
VN0300L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.
VN0300L Datasheet
