MRF6V2150NB Datasheet | Motorola Semiconductor

.. Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. - Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain - 25.5 dB Drain Efficiency - 69% - Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power - Integrated ESD Protection - Excellent Thermal Stability - Facilitates Manual Gain...