MRF6V2300N Key Features
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- Excellent Thermal Stability
- Facilitates Manual Gain Control, ALC and Modulation Techniques
- 225°C Capable Plastic Package
- RoHS pliant
- 450 MHz, 300 W, 50 V LATERAL N
- CHANNEL SINGLE
- ENDED BROADBAND RF POWER MOSFETs
