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MRF6V2300N - RF Power Field Effect Transistor

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Motorola Semiconductor

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MRF6V2300N RF Power Field Effect Transistor by Motorola Semiconductor - Datasheet Preview — Datasheet preview – MRF6V2300N

Datasheet Details

Part number	MRF6V2300N
Manufacturer	Motorola Semiconductor
File Size	350.20 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF6V2300N Datasheet
Additional preview pages of the MRF6V2300N datasheet.

Product details

Features

Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Excellent Thermal Stability.
Facilitates Manual Gain Control, ALC and Modulation Techniques.
225°C Capable Plastic Package.
RoHS Compliant MRF6V2300N MRF6V2300NB.

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Published: Nov 14, 2006 |