MRF6V2300NB Overview
Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz.
MRF6V2300NB Key Features
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- Excellent Thermal Stability
- Facilitates Manual Gain Control, ALC and Modulation Techniques
- 225°C Capable Plastic Package
- RoHS pliant
- 450 MHz, 300 W, 50 V LATERAL N
- CHANNEL SINGLE
- ENDED BROADBAND RF POWER MOSFETs
