1N5825 Overview
® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry.
1N5825 Key Features
- Extremely Low vF
- High Surge Capacity
- Low Stored Charge, Majority
- TX Version Available
- Carrier Conduction Low Power Loss/ High Efficiency
- representing boundaries on device characteristics
- are given to facilitate "worst case" design
- 65 to +125 150
- R6JA PF(AV)
- R6JA PR(AV) (1) where
