1N5825 Datasheet | onsemi

1N5823 ,1N5824 ,1N5825 1N5823 and 1N5825 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Features - Extremely Low VF - Low Power Loss/High Efficiency - Low Stored Charge, Majority Carrier Conduction - Shipped in plastic bags, 500 per bag - Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to the part number - Pb- Free...