24N40E - MTW24N40E

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h board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 9000 8000 C,.

Motorola

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Part number	24N40E
Manufacturer	Motorola
File Size	153.57 KB
Description	MTW24N40E
Datasheet	24N40E Datasheet
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MOTOROLA www.DataSheet4U.com Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTW24N40E/D TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.

Published: Aug 6, 2009 |