Datasheet4U Logo Datasheet4U.com

24N40-HC - 400V N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 24N40-HC is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 0.18 Ω @ VGS=10V, ID=12A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-C35.d 24N40-HC Preliminary Power MOSFET.

📥 Download Datasheet

Datasheet preview – 24N40-HC

Datasheet Details

Part number 24N40-HC
Manufacturer UTC
File Size 294.87 KB
Description 400V N-CHANNEL POWER MOSFET
Datasheet download datasheet 24N40-HC Datasheet
Additional preview pages of the 24N40-HC datasheet.

📁 Similar Datasheet

  • 24N40E - MTW24N40E (Motorola)
  • 24N06 - NTD24N06 (ON Semiconductor)
  • 24N50 - N-Channel MOSFET (Inchange Semiconductor)
  • 24N50 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 24N60C3 - SPW24N60C3 (Infineon)
  • 24N60DM2 - N-Channel Power MOSFET (STMicroelectronics)
  • 24N60FD2 - 600V DP MOS POWER TRANSISTOR (Silan Microelectronics)
  • 24N60FJD2 - 600V DP MOS POWER TRANSISTOR (Silan Microelectronics)
  • 24N60M2 - N-Channel MOSFET (STMicroelectronics)
  • 24N60PN - 600V DP MOS POWER TRANSISTOR (Silan Microelectronics)
Other Datasheets by UTC

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 24N40-HC Preliminary 24A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 24N40-HC is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 0.18 Ω @ VGS=10V, ID=12A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-C35.
Published: |