• Part: 2N1120
  • Description: PNP germanium power transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 91.55 KB
Download 2N1120 Datasheet PDF
2N1120 page 2
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Datasheet Summary

1120 2N (GERMANIUM) PNP germanium power transistor for military and industrial power applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Emitter Current Total Device Dissipation @ TC = 250 C Derate above 250 C Operating Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCES VCB VEB 40 70 80 40 15 90 1.2 -65 to +100 Unit Vdc Vdc Vdc Vdc Adc Watts W!oC °c Symbol Max (}JC Unit °C!W POWER- TEMPERATURE DERATING CURVE ~~ '" .- -:;j .So i.''s."". 40 Q) "p0., p.,A 20 10 o o """ " ~ ~", "-...