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1120 2N
(GERMANIUM)
PNP germanium power transistor for military and industrial power applications.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Emitter Current Total Device Dissipation @ TC = 250 C
Derate above 250 C Operating Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol VCEO VCES VCB VEB
IE
PD
TJ
2N1120
40 70 80 40 15 90 1.2 -65 to +100
Unit Vdc Vdc Vdc Vdc Adc Watts W!oC °c
Symbol
Max
(}JC
0.8
Unit
°C!W
POWER·TEMPERATURE DERATING CURVE
100
90
~~
'"
80
.§
-:;j
60
.So
i.''s."". 40
Q)
"p0.,
p.
2N1120 Datasheet
