2N1711 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N1711 |
|---|---|
| Datasheet | 2N1711-Motorola.pdf |
| File Size | 50.89 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | GENERAL PURPOSE TRANSISTOR |
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(TA = 25C unless otherwise noted.! Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 100 mAdc, pulsed;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N1711 | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
 |
2N1711 | NPN medium power transistor | Philips |
 |
2N1711 | SWITCHES AND UNIVERSAL AMPLIFIERS | STMicroelectronics |
 |
2N1711 | NPN Low Power Silicon Transistor | VPT |
 |
2N1711 | Silicon Planar Epitaxial Transistors | Comset Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N1705 | PNP Transistor |
| 2N1706 | PNP Transistor |
| 2N1707 | PNP Transistor |
| 2N1708 | NPN silicon transistor |
| 2N1724 | NPN silicon power transistors |
| 2N1725 | NPN silicon power transistors |
| 2N173 | PNP germanium power transistors |
| 2N174 | PNP germanium power transistors |
| 2N1742 | PNP Transistor |
| 2N1751 | PNP Germanium power transistor |
