• Part: 2N1751
  • Description: PNP Germanium power transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 113.01 KB
Download 2N1751 Datasheet PDF
2N1751 page 2
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Datasheet Summary

1751 2N (GERMANIUM) Collector Connected to Case CASE 3A (T0-3 modified) PNP Germanium power transistor designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining voltage capability. - Alloy-Diffused Epitaxial Construction - Low Saturation Voltages - VCE(sat) = 0.3 Vdc (Max) @ IC = 20 Adc VBE(sat) = 0.7 Vdc (Max) @ IC = 20 Adc MAXIMUM RATINGS Rating Collector-Emitter Voltage - Collector-Base Voltage !l<Emitter-Base Voltage - Collector Current - Continuous Base Current - Continuous Total Device Dissipation @TC =25°C Derate above 25°C '- Operating and Storage Junction Temperature Range Symbol Value VCEO VCB VEB ~ TJ ,...