| Part number | 2N2102 |
|---|---|
| Datasheet | 2N2102-Motorola.pdf |
| File Size | 37.27 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | AMPLIFIER TRANSISTOR |
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(TA = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dc = 100 mAdc, Rgg =s 10 ohms) Collector-Emitter Sustaining Voltage(2) dc =.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N2102 | Silicon NPN Transistor | NTE |
 |
2N2102 | EPITAXIAL PLANAR NPN TRANSISTOR | STMicroelectronics |
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2N2102 | Silicon Planar Epitaxial NPN transistor | Comset Semiconductor |
 |
2N2102 | Bipolar NPN Device | Seme LAB |
 |
2N2102 | NPN Silicon Transistor | CDIL |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N2100 | PNP Transistor |
| 2N2137 | PNP germanium industrial power transistors |
| 2N2137A | PNP germanium industrial power transistors |
| 2N2138 | PNP germanium industrial power transistors |
| 2N2138A | PNP germanium industrial power transistors |
| 2N2139 | PNP germanium industrial power transistors |
| 2N2139A | PNP germanium industrial power transistors |
| 2N2140 | PNP germanium industrial power transistors |
| 2N2140A | PNP germanium industrial power transistors |
| 2N2141 | PNP germanium industrial power transistors |
