Download 2N2273 Datasheet PDF
Motorola Semiconductor
2N2273
2N2273 is High-frequency germanium PNP transistor manufactured by Motorola Semiconductor.
2273 2N (GERMANIUM) 2N2273 JAN CASE 22 (TO-IS) Collector connected to C8.e High-frequency germanium PNP transistor, designed for military and high-reliability industrial as well as mercial VHF amplifier applications. MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector- Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TA = 25°C Derate above 25 °C Junction Operating & Storage Temperature Range Symbol VCB VCES VCEO VEB Value 25 25 15 1.0 100 150 Unit Volts Volts Volts Volt m A m W m Wr C - Tstg -65 to +100 °c TABLE I - GROUP A INSPECTION (TA = 25°C unless otherwise noted) BOTH TYPES (LTPD applies to JAN 2N2273 only) Examination or Test MIL-STD-7S0 Limits Method Symbol Min Max Unit LTPD SUBGROUP 1 Visual and Mechanical Examination - -- -5 SUBGROUP 2 Collector-Base Cutoff Current (VCB = 12 Vdc, IE =0) Collector- Base Breakdown Voltage (IC = 100/.LAdc, IE =...