2N2212 - PNP GERMANIUM POWER TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N2212
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	104.96 KB
Description	PNP GERMANIUM POWER TRANSISTORS
Datasheet	2N2212 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N2218	SILICON NPN TRANSISTOR	Central Semiconductor
2N2218	NPN SILICON PLANAR SWITCHING TRANSISTORS	CDIL
2N2218	NPN-SWITCHIN SILICON TRANSISTOR	Microsemi
2N2218	NPN Switching Silicon Transistor	VPT
2N2218	NPN Switching Silicon Transistor	MA-COM

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N2218	NPN Transistor
2N2218A	NPN Transistor
2N222	Amplifier Transistors
2N2221	NPN Transistor
2N2221A	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N2212 (GERMANIUM) PNP GERMANIUM POWER TRANSISTORS · .. designed for high-current SllVitching applications requiring low saturation voltages. short SllVitching times and good collector-emitter sustaining capability. • Alloy-Diffused Epitaxial Construction • Low Saturation Voltage- VCE(SAT) = 0_5 Vdc (Max) @IC = 5.0 Adc 10 AMPERE PNP ADE GERMANIUM POWER TRANSISTORS 120 VOLTS 102 WATTS MAXIMUM RATINGS Rating "Collector-Emitter Voltage "Collector-Base Voltage "Emitter-Base Voltage "Collector Current - Continuous "Base Current - Continuous Total Device Dissipation@ TC = 25·C Derate above 25·C "Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic .Thermal Resistance, Junction to Case "Indicates JEDEC Registered Data_ Symbol VCER VCB VEB IC IB PD TJ.