Rectron Semiconductor 2N2219A
TO-39 NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2219A Specifications
- Package : TO-39
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 800mA
- Collector Base Voltage : 75V
- Collector Emitter Voltage : 50V
- Emitter Base Voltage : 6V
- Collector Emitter Saturation Voltage : 300mV
- Max Power Dissipation : 800mW
- Max Operating Temp : 200°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2N2219A |
|---|---|
| Datasheet | 2N2219A Download |
| Manufacturer |  Rectron Semiconductor |
| Description | TO-39 NPN SILICON PLANAR SWITCHING TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL 2N2219A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 800 Derate Above 25deg C 4.57 @ Tc=25 degC PD 3.0 Derate Above 25deg C 17.1 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature RangeELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 - 75 - 6.0 - - 10 Emitter-Cut off Current Base-Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=60V, IE=0 - 10 ICEX VCE=60V, VEB=3V - 10 IEBO VEB=3V, IC=0 - 10 IBL VCE=60V, VEB=3V - 20 VCE(Sat)* IC=150mA,IB=15mA - 0.3 IC=500mA,IB=50mA 1.0 VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 I...
