| Part number | 2N2330 |
|---|---|
| Datasheet | 2N2330-Motorola.pdf |
| File Size | 136.94 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN Transistor |
|
|
2N2330 (SILICON) 2N2331 NPN silicon annular Star transistors for low-level DclAC chopper applications. EM IHER CURRENT ("AI INVERSE SATURATION VOLTAGE versus BASE CURRENT 1.4 I,II, = 0.25 -- 1----- / T. BASE ON·DRIVE CURRENT ("AI INVERSE SATURATION CHARACTERISTICS - 20r-~~~~1-----t---~-----r--~ 1.8 .'>s ~ 1.6.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N2331 | NPN Transistor |
| 2N2303 | PNP SILICON ANNULAR TRANSISTORS |
| 2N2322 | All-diffused PNPN thyristors |
| 2N2323 | All-diffused PNPN thyristors |
| 2N2324 | All-diffused PNPN thyristors |
| 2N2325 | All-diffused PNPN thyristors |
| 2N2326 | All-diffused PNPN thyristors |
| 2N2357 | PNP Germanium power transistors |
| 2N2358 | PNP Germanium power transistors |
| 2N2359 | PNP Germanium power transistors |
