Datasheet Summary
2N2480,A
For Specifications, See 2N2060 Data.
2N2481 (SILICON) 2N2481 JAN,JTXAVAILABLE
"CASE 22 (TO-IS) Collector connected to case
NPN silicon annular transistor for high- speed switching applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Device Dissipation @ 25°C Ambient Temperature (Derate 2.06 mW/oC above 2SoC)
Total Device Dissipation @ 25°C Case Temperature (Derate 6.9 mW/oC above 25°C)
Junction Temperature
Storage Temperature
Symbol
VCB VCEO VEB PD
TJ Tstg
Value
40 15
200 -65 to+ 200
Unit
Vdc Vdc Vdc Watt
Watts
°c °c
2-304
2N2481 (Continued)
ELECTRICAL CHARACTERISTICS (TA; 25°C unless otherwise...
