2N2696 Datasheet | Motorola Semiconductor

2N2696 (SILICON) 2N2927 PNP SILICON ANNULAR TRANSISTORS designed for use in medium-speed, non-saturated switching applications_ - High Collector-Emitter Breakdown Voltage - = = BVCEO 25 Vdc @IC 100/!Adc - High Collector-Base Breakdown Voltage BVCBO = 25 Vdc@ IC = 100/!Adc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Sase Voltage Emitter-Base Voltage Collector Current -'Continuous Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation @Te= 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol Ve EO Ve B VEB Ie Po Po TJ,Tstg 2N2696 2N2927 25 25 4.0 500 0.36 0.8 2.06 4_56 1.2 3.0 6.85 17.1 -65 to +200 Unit Vde Vde Vde m Ade Watts m W/oe Watts m W/oe °e - tndicates JEOe C Registered Data. FIGURE 1 - TURN-ON AND TURN-OFF TIME TEST CIRCUIT VBB +4.0 V 0 : L J T1.0f-_...._-A,J14V0Ir-_t-i 9;::SESOURCE RISETIME < 6.0 n. 75 lin =50 OHMS PW= 500 n. TO OSCI LLOSCOPE INPUTl>100 k OHMS tr<1.0 ns PNPSILICON SWITCHING TRANSISTORS 2N2927 2N2696 i ".h 1ll I"l1"'~" r -1 ~Dl A ~ 2N2927 - 0.335...