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2N2696 (SILICON) 2N2927
PNP SILICON ANNULAR TRANSISTORS
designed for use in medium-speed, non-saturated switching applications_
• High Collector-Emitter Breakdown Voltage -
= = BVCEO 25 Vdc @IC 100/!Adc
• High Collector-Base Breakdown Voltage BVCBO = 25 Vdc@ IC = 100/!Adc
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Sase Voltage Emitter-Base Voltage Collector Current -'Continuous Total Device Dissipation@TA = 25°C
Derate above 25°C Total Device Dissipation @Te= 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol VeEO VeB VEB
Ie
Po
Po
TJ,Tstg
2N2696 2N2927 25 25 4.0 500
0.36 0.8 2.06 4_56 1.2 3.0 6.85 17.1 -65 to +200
Unit Vde Vde Vde mAde Watts mW/oe
Watts mW/oe
°e
*tndicates JEOeC Registered Data.
2N2696 Datasheet
