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2N2720 - DUAL AMPLIFIER TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous @ Total Device Dissipation TA = 25°C Derate above 25°C @ Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO ic PD pd Tj. Tstg Value 60 80 6.0 40 One Die Both Die 0.3 0.6 1.71 3.4 0.6 1.2 3.4 6.8 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watt mW/°C °C 2N2720 2N2721 CASE 654-07, STYLE 1 DUAL AMPLIFIER TRANSISTOR NPN SILICON Refer to 2N2060 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) 0c = 10 mAdc, Bl 0)_ Collector Cutoff Current Collector Cutoff Current (VCE = 5.