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2N2725 - NPN Transistor

Download the 2N2725 datasheet PDF. This datasheet also covers the 2N2724 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2724-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2723 thru 2N2725 (SILICON) CASE 20(8) (TO-72) Two NPN silicon annular transistors connected as a darlington amplifier, and designed for applications requiring very high gain. EZ c = MAXIMUM RATINGS (TA 25°C unless otherwise noted) Rating Symbol 2N2723 2N2724 2N2725 Collector Emitter Voltage VCE20 60 45 Collector-Base Voltage VCB1 80 45 Emitter-Base Voltage VE2B1 12 10 Collector Current IC 40 30 Total Device Dissipation@TA = 25°C Derate above 25°C Total Device Dissipation @T C = ·25° C Derate above 25°C TC = 100°C Operating and Storage Junction Temperature Range PD PD TJ , Tstg 0.5 2.9 1.8 1.0 10.