2N2846 - NPN Transistor

Motorola Semiconductor (now NXP Semiconductors)

Download the 2N2846 datasheet PDF. This datasheet also covers the 2N2845 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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2N2846 npn transistor by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N2845-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N2846
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	95.41 KB
Description	NPN Transistor
Datasheet	2N2846 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N2843	p-channel JFET	Siliconix
2N2844	Small-Signal Amplifiers	Siliconix
2N2845	Bipolar NPN Device	Seme LAB
2N2800	Small Signal Transistors	Central Semiconductor
2N2801	Small Signal Transistors	Central Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N2845	NPN Transistor
2N2847	NPN Transistor
2N2848	NPN Transistor
2N2800	PNP Transistor
2N2801	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N2845 thru 2N2848 (SILlC()N) CASE 22 (TO-18) 2N2845 2N2847 NPN silicon annular transistors designed for highspeed, medium-power saturated switchingapplications. CASE 31 (TO-S) 2N2846 2N2848 MAXIMUM RATINGS Rating Symbol 2N2845 2N2846 2N2847 2N2848 Unit Collector-Eniitter Voltage* VCEO* 30 30 20 20 Vdc Collector-Base Voltage VCB 60 60 60 60 Vdc Eniitter-Base Voltage VEB 5.0 5.0 5.0 5.0 Vdc Total Device Dissipation@ TA = 25°C Po Derate above 25°C 360 800 2.1 4.6 360 800 mW 2.1 4.6 mW/oC Total Device Dissipation@TC = 25°C Po Derate above 25°C 1.2 3.0 6.9 17.2 1.2 3.0 Watts 6.9 17.