2N2912 - high-frequency power transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N2912
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	132.03 KB
Description	high-frequency power transistor
Datasheet	2N2912 Datasheet

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Full PDF Text Transcription (Reference)

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2N2912 (GERMANIUM) CASE 8 PNP high-speed, high-frequency power transistor especially designed for switching and power converter circuits operating from low-voltage power sources such as solar cells, thermo-electric generators, sea cells, fuel cells and 1. 5 volt batteries. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Device Dissipation @ TC = 35°C Derate above 35°C Symbol vCEO VCB VEB IC IB PD Rating 5.0 15 1.5 25 3.0 75 1.