| Part number | 2N2912 |
|---|---|
| Datasheet | 2N2912-Motorola.pdf |
| File Size | 132.03 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | high-frequency power transistor |
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2N2912 (GERMANIUM) CASE 8 PNP high-speed, high-frequency power transistor especially designed for switching and power converter circuits operating from low-voltage power sources such as solar cells, thermo-electric generators, sea cells, fuel cells and 1. 1---'-1 ms or less The Safe Operating Area Curves in- dicate Ic - VCE limits below which the device will not enter secondary breakdown. Collector load lines for...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N2913 | DUAL AMPLIFIER TRANSISTOR |
| 2N2914 | DUAL AMPLIFIER TRANSISTOR |
| 2N2915 | DUAL AMPLIFIER TRANSISTOR |
| 2N2916 | DUAL AMPLIFIER TRANSISTOR |
| 2N2917 | DUAL AMPLIFIER TRANSISTOR |
| 2N2918 | DUAL AMPLIFIER TRANSISTOR |
| 2N2919 | DUAL AMPLIFIER TRANSISTOR |
| 2N2903 | DUAL AMPLIFIER TRANSISTOR |
| 2N2903A | DUAL AMPLIFIER TRANSISTOR |
| 2N2904 | PNP Silicon Annular Hermetic Transistors |
