• Part: 2N2912
  • Description: high-frequency power transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 132.03 KB
Download 2N2912 Datasheet PDF
2N2912 page 2
Page 2

Datasheet Summary

2N2912 (GERMANIUM) CASE 8 PNP high-speed, high-frequency power transistor especially designed for switching and power converter circuits operating from low-voltage power sources such as solar cells, thermo-electric generators, sea cells, fuel cells and 1. 5 volt batteries. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Device Dissipation @ TC = 35°C Derate above 35°C Symbol vCEO VCB VEB IC IB PD Rating 5.0 15 1.5 25 3.0 75 1.0 Unit Vdc Vdc Vdc Adc Adc Watts wjOc Operating and Storage Junction Temperature Range TJ , Tstg -65 to +110 °c = Lead temperature 1/16" from case for 10...