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2N30S4A (SILICON)
MEDIUM-POWER NPN SILICON TRANSISTOR
· .. designed for general purpose switching and amplifier applications.
• Aluminum TO·66 Package for Better Power Handling Capability 75 Watts@Tc = 250 C
• Excellent Safe Operating Area • DC Current Gain Specified to 3.0 Amperes • Complement to PNP Type 2N6049
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Emitter Voltage
(RBE = 100 n) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Peak Base Current Total Device Dissipation @ T C = 25°C
Derate above 2SoC Operating and Storag~ Junction,
Temperature Range
·Indicates JEOEC Registered Data
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
Symbol VeEO VeER
VeB VEB Ie
IB Po
T J. Tstg
Value 55 60
90 7.0 4.0 10 2.0 75 0.
2N3054A Datasheet
