Motorola 2N3055A
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
MAXIMUM RATINGS
Rating Symbol VCEO VCBO VCEV 2N3055A MJ2955A 60 MJ15015 MJ15016 120 200 200 Unit Vdc Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage 100 100 Collector–Emitter Voltage Base Reversed Biased Emitter–Base Voltage VEBO IC IB 7.0 15 Collector Current — Continuous Base Current 7.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 115 0.65 180 1.03 Watts W/_C TJ, Tstg – 65 to + 200● Current–Gain — Bandwidth–Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) – NPN = 2.2 MHz (Min) – PNP
● Safe Operating Area — Rated to 60 V and 120 V, Respectively 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS CASE 1–07 TO–204AA (TO–3) _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC Max Max Unit Thermal Resistance, Junction to Case 1.52 0.98 _C/W * Indicates JEDEC Registered Data. (2N3055A) PD(AV), AVERAGE POWER DISSIPATION (W) 200 150 MJ15015 MJ15016 100 50 2N3055A MJ2955A 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1.