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2N3135 - PNP silicon annular Star transistors

Download the 2N3135 datasheet PDF. This datasheet also covers the 2N3133 variant, as both devices belong to the same pnp silicon annular star transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3133-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3133 thru 2N3136(SILICON) ~ PNP silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. CASE 22 (TO-18) 2N3133 2N3134 2N3135 2N3136 Collector connected to case MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @250C ease Temperature Derate Above 25°C Total Device Dissipation @25°C Ambient Temperature Derate Above 25°C JWlction Temperature Storage Temperature Symbol VCB VCEO VEB Ie PD PD TJ Tstg ~~~{34 (TO-5) 50 35 4.0 6.00 ~~~~~~ (TO-18) 50 35 4.0 600 3 1.8 17.3 10.3 0.6 0.4 3.43 2.