2N3137 - NPN silicon annular transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3137
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	96.36 KB
Description	NPN silicon annular transistors
Datasheet	2N3137 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3133	PNP silicon annular Star transistors
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2N3114	Amplifier Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3137 2N (SILICON) MM1803 CASE 31 (TO-5) NPN silicon annular transistors for large signal VHF and UHF applications. Collector connected ·to case MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Power Dissipation @25'C Case Temperature @25'C Ambient Temperature Operating Junction Temperature Storage Temperature Range Thermal Resistance Junction to Case Thermal ReSistance Junction to Ambient Symbol VCB VCEO VEB IC PD TJ , Tstg /lJC /I JA 2N3137 40 20 4.0 150 MM1803 50 25 5.0 150 2.0 0.8 -65 to +200 87.5 153 Units Vdc Vdc Vdc mAdc Watts 'c 'C/ Watt 'C/ Watt 250 MHz POWER GAIN TEST CIRCUIT (2N3137) 250 MHz POWER GAIN TEST CIRCUIT (MM1B03) L-J"Y,n....._...r.., Z out = 50 L2 .075 I'H (5.5 turns #16ga.