2N3137 Datasheet and Specifications PDF

The 2N3137 is a NPN silicon annular transistors.

Key Specifications

Max Operating Temp175 °C
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Part Number2N3137 Datasheet
ManufacturerMotorola Semiconductor
Overview 3137 2N (SILICON) MM1803 CASE 31 (TO-5) NPN silicon annular transistors for large signal VHF and UHF applications. Collector connected ·to case MAXIMUM RATINGS Rating Collector-Base Voltage Col. se noted) Characteristic Collector-Base Breakdown Voltage IC = O. 1mAdc, IE - 0 Collector-Emitter Open Base Sus. Voltage IC - 15mAdc, IB = 0 Collector Cutoff Current VCB- 20Vdc, IE - 0, TC - +150' C Collector Cutoff Current VCB -20Vdc, ~=O Emitter-Base Breakdown Voltage IE - 100jLA, IC - 0 DC CUrre.
Part Number2N3137 Datasheet
DescriptionSmall Signal Transistors
ManufacturerCentral Semiconductor
Overview VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5. 0 30 100 150 300 150 150 50 500 500 500 500 150 150 150 2.5 1,000 1,000 20 20 1.0 1.0 2.0 2.0 10 10 5.0 10 10 10 10 10 10 10 10 10 1.0 10 10 10 10 10 10 1.0 10 10 10 5.0 1.0 1.0 1.0 1.0 10 10 10 5.0 2.0 2.0 10 10 MAX 0.40 0.40 0.50 0.50 0.40 0.40 0.25 0.50 0.50 0.50 0.50 2.00 0.40 0.20 0.20 1.40 1.0.

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