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2N3248 (SILICON) 2N3249
CASE 22
(TO·18)
PNP silicon annular transistors for low-level, highspeed switching applications.
Collector connected to else MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Device Dissipation @. 25°C Ambient Temperature
Derate above 25°C
Total Device Dissipation @25°C Case Temperature
Derate above 25°C Operating Junction Temperature
Storage Temperature Range
Symbol
VCB VCEO VEB PD
PD
TJ Tstg
Value
15 12 5.0
Unit
Vdc Vdc Vdc
0.36
watt
2.06
mW/oC
1.2 6.9
200
-65 to +200
watts mW/oC
°c
°c
FIGURE 1- t.. CIRCUIT
Y~3t~r-o
Y,
I - ....j
300.0
= DUTY CYCLE 2"
FIGURE 2- t... CIRCUIT
v'_ml" I o
Yee
D---'-- >---......+-1: -1_
-l I, I--
I.SII
..,-. C. .-1
I:~~~;'"
--
Ie Vcc Ita lie esc-I· V.. V,
V.
2N3248 Datasheet
