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2N3249 - PNP silicon annular transistors

Download the 2N3249 datasheet PDF. This datasheet also covers the 2N3248 variant, as both devices belong to the same pnp silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3248-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3248 (SILICON) 2N3249 CASE 22 (TO·18) PNP silicon annular transistors for low-level, highspeed switching applications. Collector connected to else MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Device Dissipation @. 25°C Ambient Temperature Derate above 25°C Total Device Dissipation @25°C Case Temperature Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCB VCEO VEB PD PD TJ Tstg Value 15 12 5.0 Unit Vdc Vdc Vdc 0.36 watt 2.06 mW/oC 1.2 6.9 200 -65 to +200 watts mW/oC °c °c FIGURE 1- t.. CIRCUIT Y~3t~r-o Y, I - ....j 300.0 = DUTY CYCLE 2" FIGURE 2- t... CIRCUIT v'_ml" I o Yee D---'-- >---......+-1: -1_ -l I, I-- I.SII ..,-. C. .-1 I:~~~;'" -- Ie Vcc Ita lie esc-I· V.. V, V.