2N3293 - NPN silicon annular transistor

Motorola Semiconductor (now NXP Semiconductors)

Download the 2N3293 datasheet PDF. This datasheet also covers the 2N3291 variant, as both devices belong to the same npn silicon annular transistor family and are provided as variant models within a single manufacturer datasheet.

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2N3293 npn silicon annular transistor by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N3291-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N3293
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	125.54 KB
Description	NPN silicon annular transistor
Datasheet	2N3293 Datasheet

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3290	NPN silicon annular transistors
2N3291	NPN silicon annular transistor
2N3292	NPN silicon annular transistor
2N3294	NPN silicon annular transistor
2N3295	NPN silicon annular Star transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N3291 thru 2N3294 (SILICON) CASE 20 (TO-72) NPN silicon annular transistor for TV and FM mixer, RF and IF amplifier and general-purpose, low-noise, high-gain amplifier applications. MAXIMUM RATINGS Rating Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Symbol VCB VCES VEB 2N3291 2N3292 25 25 3.0 2N3293 2N3294 20 20 3.0 Unit Volts Volts Volts Collector Current Ie 50 50 mA Power Dissipation at 25°C Case PD 300 300 mW Above 25°C derate 1. 71 mW/oC Power Dissipation at 25°C Amb. PD Above 25°C derate 1.14 mW/oC Junction Temperature TJ Storage Temperature Range Tstg 200 200 mW +200 +200 °c • -65 to +200 • °c NEUTRALIZED POWER GAIN AND NOISE FIGURE versus FREQUENCY 50 Vco- 10 Vde, Ie - 2 mAde ... 40 ~ ~ .... II.