2N3295 - NPN silicon annular Star transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3295
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	164.76 KB
Description	NPN silicon annular Star transistor
Datasheet	2N3295 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3290	NPN silicon annular transistors
2N3291	NPN silicon annular transistor
2N3292	NPN silicon annular transistor
2N3293	NPN silicon annular transistor
2N3294	NPN silicon annular transistor

Full PDF Text Transcription (Reference)

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2N3295 (SILICON) NPN silicon annular Star transistor for linear amplifier applications from 2.0 to 100 MHz. CASE 31 (TO-S) Collector connected to case MAXIMUM RATINGS· Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Base Current (Continuous) Total Device Dissipation (25°C Case Temperature) Derate above 25°C Total Device Dissipation (25°C Ambient Temperature) Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VCB VCES VEB IC IB PD PD TJ Tstg Rating 60 60 5.0 250 50 2.0 13.3 0.8 5.33 -65 to 175 -65 to 175 • The maximum ratings as given for DC conditions can be exceeded on a pulse basis. See Electrical Characteristics.