2N3298
2N3298 is NPN silicon annular transistor manufactured by Motorola Semiconductor.
2N3298 (SILICON)
CASE 22 (TO.IS)
NPN silicon annular transistor for power oscillator applications to 150 MHz.
Collector connected to ces. MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Total Device Dissipation (25°C Case Temperature) Derate Above 25°C
Total Device Dissipation (25°C Ambient Temperature) Derate Above 25°C 2m W/o C
Junction Temperature Storage Temperature Range
Symbol VCB VCES VEB
IC PD
TJ Tstg
Value 25 25 3.0 100
1.0 6.67
0.3 2.0 +175 -65 to +175
Unit Vdc Vdc Vdc m A
Watt m Wr C
Watt m W/o C
°c °c
80 MHz OSCILLATOR POWER OUTPUT TEST CIRCUIT
16K
15 p F
2.7K
12 p F
~ R' SOU BOLOMETER l,
- 4 TURNS #22 WIRE ON 'I-
- COIL FORM
-12V o-----e----..JV'.2.0U,.,..---....
2-482
2N3298 (Continued)
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise notedl
Characteristic
Symbol
Conditions
Min Typ Max Unit
Collector-Emitter Breakdown Voltage Collector- Emitter Open Base Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current...
