2N3296 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N3296 |
|---|---|
| Datasheet | 2N3296-Motorola.pdf |
| File Size | 166.25 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN silicon annular transistor |
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2N3296 (SILICON) NPN silicon annular transistor for linear amplifier applications from 2 to 100 MHz. (10-102) Collector connected to case; stud isolated from case MAXIMUM RATINGS (Note 1) Rating Collector-Base Voltage Symbol Value Unit VCB 60 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEB 3.0 Vdc Collector Current (Continuous) IC 700 mAdc Base Current (Continuous) IB 100 mAdc RF Input Power (Note...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3290 | NPN silicon annular transistors |
| 2N3291 | NPN silicon annular transistor |
| 2N3292 | NPN silicon annular transistor |
| 2N3293 | NPN silicon annular transistor |
| 2N3294 | NPN silicon annular transistor |
| 2N3295 | NPN silicon annular Star transistor |
| 2N3297 | NPN silicon annular transistor |
| 2N3298 | NPN silicon annular transistor |
| 2N3299 | GENERAL PURPOSE TRANSISTOR |
| 2N320 | PNP germanium power transistors |
