2N3296
2N3296 is NPN silicon annular transistor manufactured by Motorola Semiconductor.
2N3296 (SILICON)
NPN silicon annular transistor for linear amplifier applications from 2 to 100 MHz.
(10-102) Collector connected to case; stud isolated from case
MAXIMUM RATINGS (Note 1)
Rating
Collector-Base Voltage
Symbol
Value
Unit
Vdc
Collector-Emitter Voltage
VCES
Vdc
Emitter-Base Voltage
Vdc
Collector Current (Continuous)
700 m Adc
Base Current (Continuous)
100 m Adc
RF Input Power (Note 2)
P.
RF Output Power (Note 2)
P out
Watt (PEP)
Watts (PEP)
Total Device Dissipation
Po
(25°C Case Temperature)
Derating Factor above 25°C
Watts
40 m W/o...
