2N3297
2N3297 is NPN silicon annular transistor manufactured by Motorola Semiconductor.
3297 2N
(SILICON)
NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz.
CASE 1
(TO- 3)
Collector connected to case
MAXIMUM RATINGS.
Rating
Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Base-Current (Continuous) Power Input (PEP) Power Output (PEP) Total Device Dissipation @ 25°C Case Temperature Derating Factor above 25°C
Junction Temperature Storage Temperature Range
Symbol
VCB VCES VEB
IC ls
Pin Pout PD
TJ Tstg
Value
60 60
1.5 500 5.0 20.0
Unit
Vdc Vdc Vdc Adc m Adc Watts (PEP) Watts (PEP)
25.0 167
175 -65 to +175
Watts m W;o C
°c °C
- The maximum ratlnp u given for de conditions can be exceeded on a pulae baala. See electrical characterlstica
2-479
2N3297 (Continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Collector-Emitter Sustain Voltage
Symbol
Conditions
CES(sus)
It = 0.250A,
RBE =0
Collector Emitter-Open
CEO(sus)...
