2N3323 - PNP germanium epitaxial transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3323
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	147.34 KB
Description	PNP germanium epitaxial transistors
Datasheet	2N3323 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N3326	Small Signal Transistors	Central
2N3329	p-channel JFET	Siliconix
2N3300	Small Signal Transistors	Central
2N3300	Bipolar NPN Device	Seme LAB
2N3300	Transistor	New Jersey Semi-Conductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3324	PNP germanium epitaxial transistors
2N3325	PNP germanium epitaxial transistors
2N3300	GENERAL PURPOSE TRANSISTOR
2N3301	GENERAL PURPOSE TRANSISTOR
2N3302	GENERAL PURPOSE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N3323 (GERMANIUM) 2N3324 2N3325 CASE 22 (TO-18) Collector connected·to cese MAXIMUM RATINGS PNP germanium epitaxial transistors for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications. Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCB VCES VEB 35 Vdc 35 Vdc 3.0 Vdc Collector Current Total Device Dissipation 25°C Case Temperature Derate Above 25 °C IC 100 mA Pn 300 mW 4.0 mW;oC Total Device Dissipation 25 °C Ambient Temperature Derate Above 25°C Po 150 mW 2.0 mW;aC Junction Temperature TJ +100 °c Storage Temperature Range Tstg -65 to +100 °c 35 30 25 II"""""", 1 '. , "'''''' G,INEUTRALIZ£D) 70 60 so i I POWER GAIN AND AC CURRENT GAIN versus FREIlUENCY 15 20 h,. ~ 15 .......